KETEP 세계에너지시장정보

A solar cell (100), comprising: a semiconductor substrate (1), the semiconductor substrate (1) including a first surface and a second surface arranged opposite to each other; an emitter (2) and a first passivation layer (3) formed over the first surface of the semiconductor substrate (1); a tunneling layer (4) formed over the second surface of the semiconductor substrate (1); a first doped conductive layer (5) and a retardation layer (6) formed on a surface of the tunneling layer (4), wherein the first doped conductive layer (5) is located between the tunneling layer (4) and the retardation layer (6), and the first doped conductive layer (5) and the retardation layer (6) correspond to a metallization region; a second doped conductive layer (7) formed over the surface of the tunneling layer (4), the second doped conductive layer (7) covering the tunneling layer (4) in a non-metallization region and the retardation layer (6), wherein a doping concentration of the second doped conductive layer (7) is greater than a doping concentration of the first doped conductive layer (5), and the retardation layer (6) is configured to retard migration of a doped element in the second doped conductive layer (7) to the first doped conductive layer (5); a second passivation layer (8) formed over a surface of the second doped conductive layer (7); and a second electrode (10) penetrating through the second passivation layer (8) to form contact with the second doped conductive layer (7) and a first electrode (9) penetrating through the first passivation layer (3) to form contact with the emitter (2).