KETEP 세계에너지시장정보

A solar cell comprising:
a substrate provided with a light-receiving surface, a back surface, and side surfaces adjacent to the light-receiving surface and the back surface;
wherein on the light-receiving surface, the side surfaces, and shared corners where the light-receiving surface and the side surfaces are adjacent to each other, the substrate is provided with multiple-pyramid shared bodies, each multiple-pyramid shared body of the multiple-pyramid shared bodies having a shared surface;
wherein when viewed in the direction towards a side surface of the side surfaces, the multiple-pyramid shared body comprises a first pyramid structure formed by enclosing several first triangular surfaces and several third triangular surfaces; and when viewed in the direction towards the light-receiving surface, the multiple-pyramid shared body comprises a second pyramid structure formed by enclosing several second triangular surfaces and the several third triangular surfaces; and
wherein a third triangular surface of the several third triangular surfaces is the shared surface, and the triangular surfaces in the first triangular surfaces, the second triangular surfaces and the third triangular surfaces are in a shape of a triangle or a quasi-triangle;
the solar cell further comprises: a first semiconductor layer and a first electrode sequentially provided in a P-type conductive region on the back surface of the substrate; and a second semiconductor layer and a second electrode sequentially provided in a N-type conductive region on the back surface of the substrate; wherein, the first semiconductor layer and the second semiconductor layer are alternately arranged in an interdigitated manner, and there is an isolation region between the first semiconductor layer and the second semiconductor layer; a passivation layer located on a surface of the first semiconductor layer facing away from the substrate, and located on the side surfaces of the substrate; the first electrode penetrates the passivation layer and forms an ohmic contact with the first semiconductor layer, the second electrode penetrates the passivation layer and forms an ohmic contact with the second semiconductor layer.