KETEP 세계에너지시장정보

A back contact solar cell, comprising: a silicon substrate, and a first doped semiconductor layer formed on a partial region on a back surface of the silicon substrate, wherein
a region corresponding to the first doped semiconductor layer in the back surface of the silicon substrate is defined as a first region, and a remaining region is defined as a second region; the first region and the second region are alternately distributed; a groove structure concaving inward the silicon substrate relative to a surface of the first region is formed on the second region; and an end portion of the first doped semiconductor layer adjacent to the second region is arranged in a suspended manner;
the back contact solar cell further comprises a second doped semiconductor layer formed on the groove structure, and a conductivity type of the second doped semiconductor layer is opposite to a conductivity type of the first doped semiconductor layer; and
the groove structure further comprises a gap between the first doped semiconductor layer and the second doped semiconductor layer along an arrangement direction of the first region and the second region, and a side wall close to the second doped semiconductor layer; the second doped semiconductor layer does not extend beyond a groove bottom of the groove structure, and no part of a surface of the second doped semiconductor layer is suspended at the side wall.