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Researchers at the University of Illinois Urbana-Champaign have developed a semiconductor device, made using diamond, that has the highest breakdown voltage and lowest leakage current compared to previously reported diamond devices.

"To meet those electricity demands and modernize the electrical grid, it's very important that we move away from conventional materials, like silicon, to the new materials that we are seeing being adopted today like silicon carbide and the next generation of semiconductors—ultra-wide bandgap materials—such as aluminum nitride, diamond and related compounds," says electrical and computer engineering professor Can Bayram, who led this research, along with graduate student Zhuoran Han.