KETEP 세계에너지시장정보

Method of producing a via (VA) in a III-V multi-junction solar cell (MS) with an upper side and a lower side and the via (VA) is formed to be continuous from the upper side (OS) to the lower side (US), and the III-V multi-junction solar cell (MS) comprises a substrate (SUB) arranged at the lower side (US), and the substrate (SUB) has an upper side and an epitaxial layer system (ES), which is formed on the upper side, with a plurality of III-V layers, and the epitaxial layer system (ES) comprises at least one first III-V solar cell and an organic layer (SL) is formed at the upper side of the first III-V solar cell, - in a first method step an opening with a width X and with a first base surface (BO1) formed in the epitaxial layer system (ES) is produced by means of a laser, - in a second method step an opening with a width Y and with a second base surface (BO2) formed in the substrate is produced by means of the laser, wherein the width Y is smaller than the width X, - in a third method step an opening with a width Z is produced by means of the laser for formation of the continuous via (VA), wherein the opening has no base surface and the width Z is smaller than the width Y, - the aforesaid method steps are executed in the indicated sequence or in a desired sequence.