KETEP 세계에너지시장정보

A back contact solar cell, comprising: a silicon substrate (11), and a first doped semiconductor layer (12) and a second doped semiconductor layer (13) alternately distributed at intervals on a back surface of the silicon substrate (11), wherein a conductivity type of the first doped semiconductor layer (12) is opposite to a conductivity type of the second doped semiconductor layer (13); and in the back surface of the silicon substrate (11), regions corresponding to the first doped semiconductor layer (12) are defined as first regions (14), regions corresponding to the second doped semiconductor layer (13) are defined as second regions (15), and a region located between each first region (14) and a second region (15) adjacent to the first region (14) is defined as an isolation region (16), wherein a plurality of isolation regions (16) are provided; and a side surface of each of the first doped semiconductor layer (12) and the second doped semiconductor layer (13) close to the isolation region (16) is wave-shaped, characterized in that a fluctuation amplitude corresponding to the side surface of the second doped semiconductor layer (13) close to the isolation region (16) is greater than a fluctuation amplitude corresponding to the side surface of the first doped semiconductor layer (12) close to the isolation region (16), and/or a fluctuation frequency corresponding to the side surface of the second doped semiconductor layer (13) close to the isolation region (16) is less than a fluctuation frequency corresponding to the side surface of the first doped semiconductor layer (12) close to the isolation region (16).