세계에너지시장정보 통합검색
에너지원별 주요 특허
| 특허명 | 중국) Photovoltaic cell, method for manufacturing same, and photovoltaic module | ||
|---|---|---|---|
| 국가 | [중국] | 출원인 | ZHEJIANG JINKO SOLAR CO., LTD.(CN); JINKO SOLAR CO., LTD.(CN) |
| 우선권 번호 | CN 202011591700.4 | 우선일 | 2020.12.29 |
| 출원번호 | US 19/057,918 | 출원일 | 2025.02.19 |
| 등록번호 | US 12707758 B2 | 특허 등록일 | 2026.08.11 |
| 패밀리특허 | US 2025/0194289 A1, US 18/590,798, US 18/336,711, US 18/146,429, US 17/857,169, US 17/386,442, CN 202011591700.4 | IPC | H10F-077/30 H10F-071/00 | 산업구분 | [태양에너지] | 등록일 | 2026.10.12 |
실리콘 기판 전면에 제1 패시베이션층, 후면에 산화실리콘(0.1~5nm)과 산화알루미늄(4~20nm)으로 이루어진 제2 패시베이션층을 두고 그 위에 실리콘 과잉 조성의 산화질화실리콘층(1~30nm), 질화실리콘층(50~100nm), 산화실리콘층(0.5~5nm)을 순차 적층한 태양광 셀 구조에 관한 특허임. 후면 다층 패시베이션 스택의 원자 조성비와 두께 범위를 한정해 표면 재결합을 줄이고 변환효율을 높이는 TOPCon·PERC 계열 셀 기술임 특허 원문 발췌
제목 :
중국) Photovoltaic cell, method for manufacturing same, and photovoltaic module 독립항 :
1. A photovoltaic cell, comprising: a silicon substrate; a first passivation layer formed on a front surface of the silicon substrate; and a second passivation layer formed over a rear surface of the silicon substrate; at least one silicon oxynitride layer formed over the second passivation layer; at least one silicon nitride layer formed over the at least one silicon oxynitride layer; and a silicon oxide layer formed over the at least one silicon nitride layer; wherein the second passivation layer includes at least one aluminum oxide layer, and a thickness of the at least one aluminum oxide layer is in the range of 4 nm to 20 nm; wherein the at least one silicon oxynitride layer has a first number of silicon atoms, a second number of oxygen atoms and a third number of nitrogen atoms, the first number is greater than the second number, the second number is greater than the third number, and a thickness of the at least one silicon oxynitride layer is in the range of 1 nm to 30 nm; wherein the at least one silicon nitride layer has a fourth number of silicon atoms and a fifth number of nitrogen atoms, the fourth number is greater than the fifth number, and a thickness of the at least one silicon nitride layer is in the range of 50 nm to 100 nm; and wherein a thickness of the silicon oxide layer is in the range of 0.5 nm to 5 nm. |
|||
| 원문 링크 |
https://patents.justia.com/patent/12707758
* 이 링크를 클릭하면 외부 사이트로 연결됩니다. |
||