KETEP 세계에너지시장정보

Donor doping into a mother material with disordered intrinsic oxygen vacancies, instead of the widely used strategy of acceptor doping into a material without oxygen vacancies, can greatly enhance the conductivity and stability of perovskite-type proton conductors at intermediate and low temperatures of 250–400°C, as demonstrated by Tokyo Tech scientists (e.g. 10 mS/cm at 320°C). 

"Contrary to the conventional acceptor doping approach, donor doping can reduce proton trapping effect through the electrostatic repulsion between protons and the donor Mo6+ cations, which have a higher valence than the host cation Sc3+," explains Prof. Yashima.